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Proceedings Paper

Extension of KrF lithography to sub-50-nm pattern formation
Author(s): Shuji Nakao; Jiroh Itoh; Akihiro Nakae; Itaru Kanai; Takayiki Saitoh; Hirosi Matsubara; Kouichirou Tsujita; Ichiriou Arimoto; Wataru Wakamiya
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Paper Abstract

Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 0.5 micrometers . This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process. Because all of these elemental techniques currently becomes mature, this method is one of promising candidates for sub- 50 nm isolated line pattern formation. As a conclusion, we consider KrF lithography can be extended to sub-50 nm high speed logic node.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389025
Show Author Affiliations
Shuji Nakao, Mitsubishi Electric Corp. (Japan)
Jiroh Itoh, Mitsubishi Electric Corp. (Japan)
Akihiro Nakae, Mitsubishi Electric Corp. (Japan)
Itaru Kanai, Mitsubishi Electric Corp. (Japan)
Takayiki Saitoh, Mitsubishi Electric Corp. (Japan)
Hirosi Matsubara, Mitsubishi Electric Corp. (Japan)
Kouichirou Tsujita, Mitsubishi Electric Corp. (Japan)
Ichiriou Arimoto, Mitsubishi Electric Corp. (Japan)
Wataru Wakamiya, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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