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Proceedings Paper

In-situ measurement of lens aberrations
Author(s): Nigel R. Farrar; Adlai H. Smith; Daniel R. Busath; Dennis Taitano
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Paper Abstract

Linewidth control across an exposure field is becoming increasingly challenging as design rules shrink. Contributions to linewidth variation can arise from the reticle, the exposure tool and the resist process. For the exposure system, errors may originate from the illuminator ste-up, the projection lens aberrations using a new reticle and measurement technique. The technique uses a special reticle, which converts wavefront phase errors to displacements on the wafer. These offsets can be measured using conventional overlay tools with greater speed and accuracy than SEM measurements of small linewidths. Reconstruction of the wavefront using this data provides a more reliable in-situ characterization of aberrations.

Paper Details

Date Published: 5 July 2000
PDF: 12 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389021
Show Author Affiliations
Nigel R. Farrar, Hewlet-Packard Co. (United States)
Adlai H. Smith, Litel Instruments (United States)
Daniel R. Busath, KLA-Tencor Corp. (United States)
Dennis Taitano, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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