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Proceedings Paper

Pattern asymmetry correction using assist patterns
Author(s): Manhyoung Ryoo; Dongseok Nam; Hanku Cho; Joo-Tae Moon; Sangin Lee
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Paper Abstract

The trend of critical dimension (CD) asymmetry due to coma aberration of exposure tool and the effectiveness of assist pattern (AP) to minimize the CD asymmetry are investigated in line and space patterns by simulation and experiment. The optimum space of AP form main bar pattern to correct the CD asymmetry is about 0.3-0.4 um and seems to be insensitive to the target CD of main bar, NA and degree of coherence of lithography tool, and AP size. The results, in case of the application of AP with optical proximity correction rules achieved by simulation and experiment to logic device with 0.18 micrometers gate length, show the CD asymmetry of metrology error level and about 50 percent in-field CD uniformity improvement, as compared with those obtained before Ap application. Therefore, it is evident that the use of AP is very effective and useful to correct the CD uniformity and the CD asymmetry simultaneously.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389019
Show Author Affiliations
Manhyoung Ryoo, Samsung Electronics Co., Ltd. (South Korea)
Dongseok Nam, Samsung Electronics Co., Ltd. (South Korea)
Hanku Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)
Sangin Lee, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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