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Proceedings Paper

Patterning 220-nm pitch DRAM patterns by using double mask exposure
Author(s): Dongseok Nam; Nakgeuon Seong; Hanku Cho; Joo-Tae Moon; Sangin Lee
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Paper Abstract

The acceleration of the design rule shrinkage and delayed ArF technology currently put pressure upon KrF technology for device development difficulties, so that the extension of KrF lithography to 220nm pitch patterning is under test carefully without using ArF technology.

Paper Details

Date Published: 5 July 2000
PDF: 10 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389017
Show Author Affiliations
Dongseok Nam, Samsung Electronics Co., Ltd. (South Korea)
Nakgeuon Seong, Samsung Electronics Co., Ltd. (South Korea)
Hanku Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)
Sangin Lee, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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