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Proceedings Paper

Influence of film stress on advanced optical reticle distortions
Author(s): Lowell K. Siewert; Andrew R. Mikkelson; Roxann L. Engelstad; Edward G. Lovell; Mark E. Mason; R. Scott Mackay
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Paper Abstract

As optical lithography error budgets on pattern placement become more and more stringent for sub-130 nm technology, all mask-related distortions must be quantified, controlled, and minimized. To optimize the mask fabrication process, it is essential to identify the stress magnitudes of the thin films and determine the resulting effect on pattern placement errors. Experiments utilizing surface mapping technique have been used to quantify the stress magnitudes of current thin film deposition parameters used in photomask blank fabrication. The effect of pattern transfer on image placement errors was determined experimentally for an anisotropic metrology pattern. The stress magnitudes obtained in the thin film stress measurements were incorporated into a finite element model that simulated the mechanical effect of pattern transfer utilizing equivalent modeling techniques. Analytical, experimental, and finite element procedures have been integrated to accurately quantify thin film stress magnitudes and the corresponding pattern transfer distortions.

Paper Details

Date Published: 5 July 2000
PDF: 11 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389008
Show Author Affiliations
Lowell K. Siewert, Univ. of Wisconsin/Madison (United States)
Andrew R. Mikkelson, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Mark E. Mason, Texas Instruments Inc. (United States)
R. Scott Mackay, International SEMATECH (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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