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Proceedings Paper

Interference lithography at 157 nm
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Paper Abstract

A 157nm interference lithography system which is capable of patterning features at sub-100-nm pitch has been implemented. Initial results demonstrate approximately 50 nm line and space patterns exposed in a commercial deep-UV photoresists. Little line edge roughness is observed, indicating that the intrinsic properties of the resist may meet CD-control requirements to at least 50 nm. In addition, this system may be used to measure the spatial coherence of the 157-nm F2 laser source. Preliminary estimates show that the coherence length is approximately 40 micrometers .

Paper Details

Date Published: 5 July 2000
PDF: 4 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389007
Show Author Affiliations
Michael Switkes, MIT Lincoln Lab. (United States)
Theodore M. Bloomstein, MIT Lincoln Lab. (United States)
Mordechai Rothschild, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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