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Proceedings Paper

KrF lithography for 130 nm
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Paper Abstract

As ArF lithography continues to mature, it can be expected that, KrF lithography combined with reticle and illumination enhancements will be preferred techniques, for cost- effective 130-nm node, in particular for low-end microprocessors, random logic and DRAM designs. There are tow main enhancement routes to extend KrF lithography. The first one entails the use of alternating phase shift masks.

Paper Details

Date Published: 5 July 2000
PDF: 14 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.389002
Show Author Affiliations
Jo Finders, ASML (Netherlands)
Jan B.P. van Schoot, ASML (Netherlands)
Peter Vanoppen, ASML (Netherlands)
Mircea V. Dusa, ASML (United States)
Robert John Socha, ASML MaskTools (United States)
Geert Vandenberghe, IMEC (Belgium)
Kurt G. Ronse, IMEC (Belgium)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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