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Proceedings Paper

Effects of off-axis illumination and scattering-bar optical proximity correction on the impact of lens aberration on 130-nm polygate mask: a simulation study
Author(s): Kent H. Nakagawa; Uwe Hollerbach; J. Fung Chen
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Paper Abstract

A simulation study has been performed to look at improving the imaging of a 130nm poly gate mask design. For this lithography process, we have chosen 6 percent attenuated PSM applied with scattering-bar optical proximity correction (SB-OPC) using 248 nm exposure wavelength. We compare the process window performance of off-axis illuminations (OAI) such as QUASAR and annular to a conventional on-axis illumination. Sampled lens aberrations were introduced to the simulation model to evaluate the impact of illumination settings. Simulations show benefits of combining SB-OPC technology with OAI on the performance of 130nm poly gate line features in the presence of known lens aberrations. For this simulation study, we have used our WaveMaster software tool to automate the SOLID-C simulation loops that includes multiple pre-selected line features form an actual poly gate mask design, five different lens aberration Zernike data sets, and three illumination settings.

Paper Details

Date Published: 5 July 2000
PDF: 9 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388999
Show Author Affiliations
Kent H. Nakagawa, ASML MaskTools (United States)
Uwe Hollerbach, ASML MaskTools (United States)
J. Fung Chen, ASML MaskTools (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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