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Proceedings Paper

Characterization of linewidth variation
Author(s): Alfred K. K. Wong; Antoinette F. Molless; Timothy A. Brunner; Eric Coker; Robert H. Fair; George L. Mack; Scott M. Mansfield
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Paper Abstract

Characterization of line width variation by a three-step methodology is presented. Causes of line width variation with distinct spatial signatures are first isolated by spatial analysis. Sources with similar spatial signatures are then separated by contributor-specific measurements. Unanticipated components are lastly identified by examination of the residual from spatial analysis. Significant sources include photomask error, flare, aberrations, development non-uniformity, and scan direction asymmetry. These components are synthesized to quantify the contributions from the three modules of the patterning process: photomask, exposure system, and post-exposure processing. Although these modules are independent of one another their effects on line width variation may be correlated. Moreover, the relative contributions of the modules are found to vary with exposure tool, development track, and lithography strategy, affirming the usefulness of the methodology in process tracking and optimization.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388994
Show Author Affiliations
Alfred K. K. Wong, IBM Microelectronics Div. (United States)
Antoinette F. Molless, IBM Microelectronics Div. (United States)
Timothy A. Brunner, IBM Microelectronics Div. (United States)
Eric Coker, IBM Microelectronics Div. (United States)
Robert H. Fair, IBM Microelectronics Div. (United States)
George L. Mack, IBM Microelectronics Div. (United States)
Scott M. Mansfield, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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