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Proceedings Paper

High-repetition-rate ArF excimer laser for 193-nm lithography
Author(s): Kouji Kakizaki; Takashi Saito; Ken-ichi Mitsuhashi; Motohiro Arai; Akifumi Tada; Shinji Kasahara; Tatsushi Igarashi; Kazuaki Hotta
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Paper Abstract

A line-narrowed excimer laser has been developed for use as a light source for DUV microlithography using a refractive lens system. We report on a newly developed 3000 Hz ArF excimer laser with a long duration pulse. The laser has the following specifications: 15W average power, 0.45 pm FWHM bandwidth, 1.5 pm spectral bandwidth at 95 percent integrated energy, and 7 percent energy stability of 3 sigma at 3000 Hz. The integral-square pulse width is longer than 45 ns during a single gas fill more than 50 million pulses. We also report on a 4000 Hz excimer laser, under development.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388977
Show Author Affiliations
Kouji Kakizaki, Ushio Research Institute of Technology Inc. (Japan)
Takashi Saito, Ushio Research Institute of Technology Inc. (Japan)
Ken-ichi Mitsuhashi, Ushio Research Institute of Technology Inc. (Japan)
Motohiro Arai, Ushio Research Institute of Technology Inc. (Japan)
Akifumi Tada, Ushio Research Institute of Technology Inc. (Japan)
Shinji Kasahara, Ushio Research Institute of Technology Inc. (Japan)
Tatsushi Igarashi, Ushio Research Institute of Technology Inc. (Japan)
Kazuaki Hotta, Ushio Research Institute of Technology Inc. (Japan)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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