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Proceedings Paper

Understanding the parameters for strong phase-shift mask lithography
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Paper Abstract

In this paper we analyze selective alternating PSM synthesis and OPC modeling parameters, taking into account lithographic constraints to PSM conformance. The results shown include phase and trim regions size and shape impact on the images printed on wafers at optimum conditions and through focus, at ideal as well as in the presence of errors in phase and transmission due to mask manufacturing.

Paper Details

Date Published: 5 July 2000
PDF: 11 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388970
Show Author Affiliations
Alexander V. Tritchkov, Avant! Corp. (United States)
John P. Stirniman, Avant! Corp. (United States)
Jeffrey P. Mayhew, Avant! Corp. (United States)
Michael L. Rieger, Avant! Corp. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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