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Proceedings Paper

Influence of resist process on the best focus shift due to lens spherical aberration
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Paper Abstract

The influence of spherical aberration on imaging performance was evaluated by resist simulation for various resist thicknesses and other resist parameters. The best focus variation in terms of pattern size in L and S was not appropriate as a lithographic criterion because it varied not only with pattern size but also with resist characteristics and thickness. General rules for the best focus of L and S based on CD-defocus characteristics are proposed. The lithographic performance represented by the CD uniformity and the best focus variation of isolated patterns were predicted approximately from the result of aerial image calculation for ideal resist performance. In conclusion, the reduction in spherical aberration that leads to improved CD accuracy is not always achieved by the decrease in best focus shift.

Paper Details

Date Published: 5 July 2000
PDF: 12 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388968
Show Author Affiliations
Seiji Matsuura, NEC Corp. (Japan)
Takayuki Uchiyama, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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