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Proceedings Paper

Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks
Author(s): Michael T. Reilly; Colin R. Parker; Karen Kvam; Robert John Socha; Mircea V. Dusa
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Paper Abstract

DUV lithography using 248 nm light is a viable option for manufacturing deices with 130 nm features. A pertinent issue is generating an acceptable common process window for features of different pitches at this nominal dimension. Not only does the process latitude for any given pitch need to be acceptable; the bias in dose to size for these features must be minimized in order to create acceptable common process latitude. Demonstrated for pitch ratios of 1:1.5 and larger is the set-up of illumination, process OPC required to produce common process windows of 0.5 micrometers focus latitude at 10 percent EL. Simultaneously, scattering bars bring the isolated line process latitude to a level comparable to the 1:1.5 pitch features, greatly improving the performance over that of the isolated lines alone.

Paper Details

Date Published: 5 July 2000
PDF: 14 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388959
Show Author Affiliations
Michael T. Reilly, Shipley Co., Inc. (United States)
Colin R. Parker, Shipley Co., Inc. (United States)
Karen Kvam, Shipley Co., Inc. (United States)
Robert John Socha, ASML MaskTools (United States)
Mircea V. Dusa, ASML MaskTools (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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