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Proceedings Paper

Integration of attenuated phase-shift mask to 0.13-um technology contact level masking process
Author(s): Lay Cheng Choo; O'Seo Park; Michael J. Sack; Siu Chung Tam
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Paper Abstract

The attenuated phase shift mask has been sued to delineate 0.22 micrometers contact hole structures for 0.18micrometers technology. Using a scanner with a high NA of 0.68, this is equivalent to a k1 value of 0.60. As device shrinks down to 0.13 micrometers technology, 0.16 micrometers contact holes are to be printed with sufficient process latitudes. Using the existing high NA scanner, the k1 value is a low 0.44. Simulations were done using PROLITH/3D software, and the results show better performance for isolated holes. Higher mask transmissions are required to improve the aerial image of the dense holes. Experimentation was conducted to print 0.16micrometers contact holes using moderate and low (sigma) settings. 6 percent APSM was used with 0.16micrometers , 0.18micrometers and 0.20micrometers contact hole patterns biased by 0.04micrometers , 0.06micrometers and 0.08micrometers . Impact of these parameters on mask error enhancement factor were discussed.

Paper Details

Date Published: 5 July 2000
PDF: 10 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388956
Show Author Affiliations
Lay Cheng Choo, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
O'Seo Park, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Michael J. Sack, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Siu Chung Tam, Nanyang Technological Univ. (Singapore)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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