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Proceedings Paper

Forbidden pitches for 130-nm lithography and below
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Paper Abstract

Experiments and simulations were done to determine which pitches are forbidden for 130nm and 110nm features. Off axis illumination, annular and Quasar, and different reticle types, binary mask (BIM), 6 percent attenuating phase shift mask (PSM), 18 percent attenuating PSM, and alternating PSM were simulated and were exposed on an ASML PAS5500/700. Except for the 1:1 line to space ratio, Quasar for the BIM and the attenuated PSM had the largest process window without forbidden pitches. By increasing the transmission the exposure latitude increases. Increasing transmission, however, does not improve the depth of focus (DOF). Annular illumination was ineffective in increasing the DOF beyond 0.5micrometers for both the 130nm and 110nm features. The alternating PSM with low sigma had no forbidden pitches and had the largest DOF. Alternating PSM with high sigma however, was unable to resolve the dense pitches with sufficient process window.

Paper Details

Date Published: 5 July 2000
PDF: 16 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388951
Show Author Affiliations
Robert John Socha, ASML MaskTools (United States)
Mircea V. Dusa, ASML (United States)
Luigi Capodieci, ASML MaskTools (United States)
Jo Finders, ASML (Netherlands)
J. Fung Chen, ASML MaskTools (United States)
Donis G. Flagello, ASML (United States)
Kevin D. Cummings, ASML (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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