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Proceedings Paper

Optimization for full-chip process of 130-nm technology with 248-nm DUV lithography
Author(s): Young-Mog Ham; Seok-Kyun Kim; Sang-Jin Kim; Cheol Hur; YoungSik Kim; Ki-Ho Baik; Bong-Ho Kim; Dong-Jun Ahn
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Paper Abstract

We estimated the process margins of various cell structures and process problems for full chip process under extreme resolution limit of exposure tool. Therefore, optimizing off axis illumination (OAI) condition for various structures obtained the fine pattern and wider process margin using simulation and experiment. From our experiment, we should use as higher numerical aperture (NA), smaller R and smaller as possible to reduce critical dimension (CD) difference between dense and isolated patterns. Process margins are obtained more than 8 percent exposure latitude (EL) and 0.5 micrometers depth of focus (DOF) for each cell. However, we can consider using of attenuated phase shift mask to improve the exposure and DOF margin. We find that real full chip process induces the critical problems such as isolated line (I/L) and space (I/S) pattern variation due to lens aberration, partial coherence effect, mask error effect, and optical proximity effect. These effects play a role to determine the design rule of cell and periphery structures. In spite of good lens quality, variation of I/L and I/S pattern for various exposure conditions is almost 40nm or more compared to line and space pattern. These phenomena are becoming the critical issue to fulfill the full chip process of 130nm lithography. By optimizing mask error effect, isolated and dense pattern bias, and OAI, we can achieve 130nm technology with 248nm KrF lithography.

Paper Details

Date Published: 5 July 2000
PDF: 9 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388941
Show Author Affiliations
Young-Mog Ham, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seok-Kyun Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Sang-Jin Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Cheol Hur, Hyundai Electronics Industries Co., Ltd. (South Korea)
YoungSik Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (South Korea)
Bong-Ho Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Dong-Jun Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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