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Proceedings Paper

Optical proximity correction considering mask manufacturability and its application to 0.25-μm DRAM for enhanced device performance
Author(s): Chul-Hong Park; Sang-Uhk Rhie; Ji-Hyeon Choi; Ji-Soong Park; Hyeong-Weon Seo; Yoo-Hyon Kim; Young-Kwan Park; Woo-Sung Han; Won-Seong Lee; Jeong-Taek Kong
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Paper Abstract

A practical optical proximity correction (OPC) method is introduced and applied to 0.25 micrometers DRAM process in order to reduce the gate critical dimension (CD) variations across the exposure field. A variable threshold model is made and evaluated to enhance the model accuracy. This model takes maximum 2X computation time compared with the constant threshold model. The proposed OPC methodology considering both process effects and mask manufacturability simultaneously is discussed in view of the gate line CD variation. The correction segments of a pattern are optimized considering mask manufacturability. Patterns with jog sizes larger than 0.4 micrometers are inspect able with KLA35UV. The OPC results exhibited 60 percent reduction of gate CD variation, 90 percent matching of mean-to-target CD, and 15 percent improvement of circuit performance.

Paper Details

Date Published: 5 July 2000
PDF: 6 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388939
Show Author Affiliations
Chul-Hong Park, Samsung Electronics Co., Ltd. (South Korea)
Sang-Uhk Rhie, Samsung Electronics Co., Ltd. (South Korea)
Ji-Hyeon Choi, Samsung Electronics Co., Ltd. (South Korea)
Ji-Soong Park, Samsung Electronics Co., Ltd. (South Korea)
Hyeong-Weon Seo, Samsung Electronics Co., Ltd. (South Korea)
Yoo-Hyon Kim, Samsung Electronics Co., Ltd. (South Korea)
Young-Kwan Park, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Won-Seong Lee, Samsung Electronics Co., Ltd. (South Korea)
Jeong-Taek Kong, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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