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Proceedings Paper

Accuracy of diffused aerial image model for full-chip-level optical proximity correction
Author(s): Jee-Suk Hong; Hee-Bom Kim; Hyoung-Soon Yune; Chang-Nam Ahn; Young-Mo Koo; Ki-Ho Baik
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Paper Abstract

Recently, the miniaturization of the design rule of memory devices pushes the minimum feature sizes down to sub- wavelengths of the exposure tools. The design of a memory device comprises not only the dense patterns with critical small size in the cell region but also the random patterns in the peripheral region; the latter also need sub- wavelength lithography technology as well as the former. And the optical proximity correction (OPC) has been strongly required for the random patterns in the peripheral region where the same energy is exposed as in the cell region. Therefore, the high accuracy of simulation model used in the OPC is necessary for the full chip OPC tools. However traditional aerial image simulation has a limitation to the application due to its lack of accuracy because it does not take into account a resist process. We introduced novel lithography simulation model in 1998, which describes resist process by diffusion and chemically amplification function.

Paper Details

Date Published: 5 July 2000
PDF: 9 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388936
Show Author Affiliations
Jee-Suk Hong, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hee-Bom Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hyoung-Soon Yune, Hyundai Electronics Industries Co., Ltd. (South Korea)
Chang-Nam Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)
Young-Mo Koo, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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