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Proceedings Paper

Structure end foreshortening: lithography-driven design limitations
Author(s): Uwe Paul Schroeder; Dennis J. Warner
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Paper Abstract

Especially in logic lithography, the issue of end foreshortening becomes more and more relevant with increasingly small dimension of the printed patterns. This study examines the effect of illumination condition, mask type, and various feature types on space end foreshortening at 150nm ground rules. special emphasis is put on end foreshortening induced design limitations, which may prevent linear shrinks. Data from aerial image simulations, and from experimental data on specially designed test masks suggest that especially the variation of the end foreshortening as a function of defocus has to be considered. The most critical geometry is that of nested and butting space ends at minimum ground rules, where the foreshortening cannot be compensated completely by OPC.

Paper Details

Date Published: 5 July 2000
PDF: 8 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388930
Show Author Affiliations
Uwe Paul Schroeder, Infineon Technologies Inc. (United States)
Dennis J. Warner, Infineon Technologies Inc. (United States)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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