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Proceedings Paper

Image shortening and process development in BEOL lithography
Author(s): Ronald DellaGuardia; Dennis J. Warner; Zheng Chen; Martin Stetter; Richard A. Ferguson; Anne E. McGuire; Karen D. Badger
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Paper Abstract

The problem of image shortening is well known in semiconductor lithography. As rectangular features decrease in width, the length of the feature will print smaller than the mask image length. This problem places a constraint upon overall device design because space must be allowed for line extensions and/or adding to the side of features. Making corrections for image shortening requires mask redesign, which increases the time and cost of new product development.

Paper Details

Date Published: 5 July 2000
PDF: 10 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388928
Show Author Affiliations
Ronald DellaGuardia, IBM Microelectronics Div. (United States)
Dennis J. Warner, Infineon Technologies Inc. (United States)
Zheng Chen, IBM Microelectronics Div. (United States)
Martin Stetter, Infineon Technologies Inc. (United States)
Richard A. Ferguson, IBM Microelectronics Div. (United States)
Anne E. McGuire, IBM Mask Technology Ctr. (United States)
Karen D. Badger, IBM Mask Technology Ctr. (United States)

Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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