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Proceedings Paper

0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masks
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Paper Abstract

We report here a lithography process for 0.13 micrometers lines using a high NA 248 nm scanner and attenuated phase-shifting masks (AttPSM) employing optical proximity correction with optimized assisting features. Our current result indicate a common depth of focus of 0.5 micrometers and exposure latitude of 10 percent for lines with line/space ratios from 1:1.2 to isolated. The mask error factor with assisting feature ranges from 1.2 to 1.5 depending on the duty ratio. The line edge roughness is less than 8 nm for our current KrF resist with AttPSM. We also explore the feasibility of strong and weak quadrupole illumination for process enhancement. The results show promising potential for proximity reduction and process window enhancement. Considering practical implementation in foundry fabs, we decided to concentrate our efforts on AttPSM with annular illumination plus OPC with assisting features. Our investigation indicates that 248 nm AttPSM technology is very attractive for 0.13 micrometers device fabrication.

Paper Details

Date Published: 5 July 2000
PDF: 12 pages
Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); doi: 10.1117/12.388927
Show Author Affiliations
Yung-Tin Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chia-Hui Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hua Tai Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hung-Chang Hsieh, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shinn Sheng Yu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4000:
Optical Microlithography XIII
Christopher J. Progler, Editor(s)

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