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Proceedings Paper

193-nm photoresist development at Union Chemical Labs., ITRI
Author(s): Mao-Ching Fang; Jui-Fa Chang; Ming-Chia Tai; Tzu-Yu Lin; Ting-Chung Liu; Chien-Hung Liu
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Paper Abstract

Union Chemical Laboratories has designed and synthesized novel copolymers of norbornene-alt-derivatives, maleic anhydride and alicyclic acrylate for ArF excimer laser lithography. These polymers are prepared using a free-radical copolymerization process. Applying the resin for 193-nm single layer chemically amplified photoresist composed of cholate derivative with a PAG leads to a good resolution below 0.13 micrometer line/space patterns using an ArF stepper and 2.38 wt% tetramethylammonium hydroxide aqueous solution as a developer. Furthermore, alternating phase shift mask was used in combination with a feature size as small as 0.1 micrometer. To overcome post exposure delay (PED) effect caused by airborne contamination, three new base additives were used in the resist formulation. The etching-resist ability of resists by reaction ion etching (RIE) was showed better than conventional g-line and KrF excimer laser resists. Experimental results of CHF3/CF4 as etch gas, indicate that the etching rate selectivity with respect to SiO2 is about 0.5. The UCL photoresists also showed good shelf life stability.

Paper Details

Date Published: 23 June 2000
PDF: 7 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388378
Show Author Affiliations
Mao-Ching Fang, Union Chemical Labs./ITRI (Taiwan)
Jui-Fa Chang, Union Chemical Labs./ITRI (Taiwan)
Ming-Chia Tai, Union Chemical Labs./ITRI (Taiwan)
Tzu-Yu Lin, Union Chemical Labs./ITRI (Taiwan)
Ting-Chung Liu, Union Chemical Labs./ITRI (Taiwan)
Chien-Hung Liu, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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