Share Email Print
cover

Proceedings Paper

193-nm photoresist development at Union Chemical Labs., ITRI
Author(s): Mao-Ching Fang; Jui-Fa Chang; Ming-Chia Tai; Tzu-Yu Lin; Ting-Chung Liu; Chien-Hung Liu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Union Chemical Laboratories has designed and synthesized novel copolymers of norbornene-alt-derivatives, maleic anhydride and alicyclic acrylate for ArF excimer laser lithography. These polymers are prepared using a free-radical copolymerization process. Applying the resin for 193-nm single layer chemically amplified photoresist composed of cholate derivative with a PAG leads to a good resolution below 0.13 micrometer line/space patterns using an ArF stepper and 2.38 wt% tetramethylammonium hydroxide aqueous solution as a developer. Furthermore, alternating phase shift mask was used in combination with a feature size as small as 0.1 micrometer. To overcome post exposure delay (PED) effect caused by airborne contamination, three new base additives were used in the resist formulation. The etching-resist ability of resists by reaction ion etching (RIE) was showed better than conventional g-line and KrF excimer laser resists. Experimental results of CHF3/CF4 as etch gas, indicate that the etching rate selectivity with respect to SiO2 is about 0.5. The UCL photoresists also showed good shelf life stability.

Paper Details

Date Published: 23 June 2000
PDF: 7 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388378
Show Author Affiliations
Mao-Ching Fang, Union Chemical Labs./ITRI (Taiwan)
Jui-Fa Chang, Union Chemical Labs./ITRI (Taiwan)
Ming-Chia Tai, Union Chemical Labs./ITRI (Taiwan)
Tzu-Yu Lin, Union Chemical Labs./ITRI (Taiwan)
Ting-Chung Liu, Union Chemical Labs./ITRI (Taiwan)
Chien-Hung Liu, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top