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Proceedings Paper

Process margin enhancement for 0.25-um metal etch process
Author(s): Chung Yih Lee; Wei Wen Ma; Eng Hooi Lim; Alex Tsun-Lung Cheng; Raymond Joy; Matthew F. Ross; Selmer S. Wong; Trey Marlowe
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Paper Abstract

This study evaluates electron beam stabilization of UV6, a positive tone Deep-UV (DUV) resist from Shipley, for a 0.25 micrometer metal etch application. Results are compared between untreated resist and resist treated with different levels of electron beam stabilization. The electron beam processing was carried out in an ElectronCureTM flood electron beam exposure system from Honeywell International Inc., Electron Vision. The ElectronCureTM system utilizes a flood electron beam source which is larger in diameter than the substrate being processed, and is capable of variable energy so that the electron range is matched to the resist film thickness. Changes in the UV6 resist material as a result of the electron beam stabilization are monitored via spectroscopic ellipsometry for film thickness and index of refraction changes and FTIR for analysis of chemical changes. Thermal flow stability is evaluated by applying hot plate bakes of 150 degrees Celsius and 200 degrees Celsius, to patterned resist wafers with no treatment and with an electron beam dose level of 2000 (mu) C/cm2. A significant improvement in the thermal flow stability of the patterned UV6 resist features is achieved with the electron beam stabilization process. Etch process performance of the UV6 resist was evaluated by performing a metal pattern transfer process on wafers with untreated resist and comparing these with etch results on wafers with different levels of electron beam stabilization. The etch processing was carried out in an Applied Materials reactor with an etch chemistry including BCl3 and Cl2. All wafers were etched under the same conditions and the resist was treated after etch to prevent further erosion after etch but before SEM analysis. Post metal etch SEM cross-sections show the enhancement in etch resistance provided by the electron beam stabilization process. Enhanced process margin is achieved as a result of the improved etch resistance, and is observed in reduced resist side-wall angles after etch. Only a slight improvement is observed in the isolated to dense bias effects of the etch process. Improved CD control is also achieved by applying the electron beam process, as more consistent CDs are observed after etch.

Paper Details

Date Published: 23 June 2000
PDF: 16 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388373
Show Author Affiliations
Chung Yih Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Wei Wen Ma, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Eng Hooi Lim, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Alex Tsun-Lung Cheng, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Raymond Joy, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Matthew F. Ross, Honeywell International Inc. (United States)
Selmer S. Wong, Honeywell International Inc. (United States)
Trey Marlowe, Honeywell International Inc. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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