Share Email Print
cover

Proceedings Paper

Improvement of resist profile roughness in bilayer resist process
Author(s): Chang-Young Jeong; Sang-Wook Ryu; Ki-Yeop Park; Won-Kyu Lee; Seung-Woog Lee; Dai-Hoon Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The bi-layer resist (BLR) process, which first accomplish imaging on a thin top layer and transfer it down to a thick organic layer, is one of newly emerging patterning techniques in silicon processing. In this work, we studied the lithographic performance of the BLR process adopting FK- SPTM (Fujifilm Olin Co.) as top layer material and various organic material as bottom layer. Generally, considerable advantages of planarization, reduced substrate reflection, improved process latitude, and of enhanced resolution are achieved. However, the resolution and the process latitude are highly affected by surface interaction between the top resist and the bottom material. Moreover, the BLR process has a sidewall roughness problem related to the material factors of the resist and the degraded aerial image contrast, which can affect the reliability of the device. We found that thermal curing treatment applied after development with the consideration of the glass transition temperature are very effective in reducing the line edge roughness. More smooth and steep patterning is achieved by the thermal treatment. The linewidth controllability is below 10 nm and the k1 value is reduced from 0.5 down to 0.32 in this process. The reactive ion etching adopting O2 gas demonstrated selectivity of the top resist over bottom material more than 15:1, together with residue-free and vertical wall profile.

Paper Details

Date Published: 23 June 2000
PDF: 9 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388368
Show Author Affiliations
Chang-Young Jeong, Hyundai Electronics Industries Co., Ltd. (South Korea)
Sang-Wook Ryu, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Yeop Park, Hyundai Electronics Industries Co., Ltd. (South Korea)
Won-Kyu Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Seung-Woog Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)
Dai-Hoon Lee, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top