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Proceedings Paper

Characteristic study of electron beam stabilization for deep-UV photoresists
Author(s): Myoung-Soo Kim; Jae-Hak Choi; Chi Hyeong Rho; Min-Jong Hong; Bum-Jin Jun; Myung-Goon Gil; Bong-Ho Kim; Dong-Jun Ahn; Matthew F. Ross; Selmer S. Wong
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Paper Abstract

As the design rule of device shrinks below 0.14 micrometer, the higher resolution is required for real device application. With smaller feature size below 0.14 micrometer, the lower coating thickness of resist is essential because of the pattern collapse issue at the high aspect ratio. However, the lower resist thickness induces the problem of etch selectivity due to the limited etch resistance of resist. In this study, the method of electron beam stabilization has been applied for improving the etch selectivity of resist patterns having an aspect ratio less than 3:1. With applying the electron beam stabilization, the Deep-UV photoresists based on the chemical structures of Acetal (AS106) and Escap (UV82) types have been evaluated in the respect of etch selectivity as the functions of an electron beam dose and etch condition. The metal etch rate reductions of 20 percent and 26 percent have been occurred for the resists of Acetal and Escap type, respectively, at 2000 (mu) C/cm2. And the thermal and chemical properties were characterized before and after electron beam stabilization using DSC, TGA, and FT-IR. The cross-sectional views of resist pattern after electron beam processing were also investigated to know the chemical stability of resist during the electron beam process. Based on the experimental results, the application possibility of electron beam stabilization for real device fabrication below 0.14 micrometer has been presented in this paper.

Paper Details

Date Published: 23 June 2000
PDF: 11 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388365
Show Author Affiliations
Myoung-Soo Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jae-Hak Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)
Chi Hyeong Rho, Hyundai Electronics Industries Co., Ltd. (South Korea)
Min-Jong Hong, Hyundai Electronics Industries Co., Ltd. (South Korea)
Bum-Jin Jun, Hyundai Electronics Industries Co., Ltd. (South Korea)
Myung-Goon Gil, Hyundai Electronics Industries Co., Ltd. (South Korea)
Bong-Ho Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Dong-Jun Ahn, Hyundai Electronics Industries Co., Ltd. (South Korea)
Matthew F. Ross, Honeywell International Inc. (United States)
Selmer S. Wong, Honeywell International Inc. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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