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Proceedings Paper

SiON as a panacea for KrF photolithography? Study on process optimization, substrate dependency, and delay time stability on silicon nitride and BPTEOS film
Author(s): Jun-Sung Chun; Shekhar Bakshi; Stanley Barnett; James Shih; Shih-Ked Lee
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Paper Abstract

Silicon oxynitride film on Silicon Nitride film as an inorganic ARC has been investigated for the tighter critical dimension control. Use of SiON film as an inorganic ARC on silicon nitride film led to the better CD uniformity control reducing substrate dependency issue. Resist profiles on SiON have also been investigated on BPTEOS and on silicon nitride films. Footing on BPTEOS was removed completely by adding SiON film. It is found that SiON showed storage time limit after deposition. Five days after deposition, it showed footing profile. There must be some unknown chemistry to explain that phenomenon. Oxygen plasma applied onto the 5 dayed SiON film showed foot free profile. In the paper we will describe the CD control on Nitride by using SiON as an inorganic ARC, substrate dependence and storage time limit of SiON film.

Paper Details

Date Published: 23 June 2000
PDF: 6 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388356
Show Author Affiliations
Jun-Sung Chun, Integrated Device Technology, Inc. (United States)
Shekhar Bakshi, Integrated Device Technology, Inc. (United States)
Stanley Barnett, Integrated Device Technology, Inc. (United States)
James Shih, Integrated Device Technology, Inc. (United States)
Shih-Ked Lee, Integrated Device Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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