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Proceedings Paper

PHSF-HASN series photothermoresists
Author(s): Shangxian Yu; Xiao Tong; Weijian Zhao; Xinhua Jin; Jiangnan Gu
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Paper Abstract

Poly (4-hydroxylstyrene) formate (PHSF) can be synthesized from PHS, DMF and O equals PCl3. DMF is not only the solvent but also the reactant. When its use level is excessive, the esterification ratio of PHSF is decided by the use level of O equals PCl3. The higher the esterification ratio of PHSF, the lower the solubility of PHSF in basic aqueous. With deep UV light, PHSF can directly photodecomposite to eliminate CO. In the presence of near UV light acid generators such as triazine-B, PHSF can rapidly occur photo-acidolysis. The above performances are just the requisite performances of the composition of a positive chemical amplification resist or thermosensitive material. The novolak resins with high proportional alkyl ether bonds or phenolic ether bonds can be synthesized by controlling the reaction conditions with alkali-acid or acid-alkali stepwise method. These ether structures are both easy to occur acidolysis, then the resins can become soluble in aqueous basic developing solution PHSF with proper esterification ratio is mixed with a high acid solubilyzation novolak (HASN) resin at proper ratio, and a fixed quantity of near UV light acid generator is added, then they form the positive photoresist. If a near infrared absorption dye is added, the thermoresist scanned by near infrared laser are obtained, or they can form the thermal imaging compositions used in thermosensitive plate.

Paper Details

Date Published: 23 June 2000
PDF: 7 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388338
Show Author Affiliations
Shangxian Yu, Beijing Normal Univ. (China)
Xiao Tong, Beijing Normal Univ. (China)
Weijian Zhao, Lucky Group Second Film Factory (China)
Xinhua Jin, Beijing Normal Univ. (China)
Jiangnan Gu, Beijing Normal Univ. (China)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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