Share Email Print
cover

Proceedings Paper

New development of cost-effective sub-0.18-μm lithography with i-line
Author(s): Hoesik Chung; Jinhang Jung; Youngsun Kim; KwangSoek Choi; NamHee Yoo; Sangwoong Yoon; JeEung Park
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

To reach the sub-0.3 micrometer contact hole pattern by i-line lithography, some advanced technology was introduced such as Phase Shift Mask (PSM) and/or photoresist (PR) flow process. It may be possible that the contact hole is patterned with 0.18 micrometer resolution by the PR flow process with PSM. However, PSM cause the Tg temperature of resist down at the phase shift area. And it also leads the bulk effect by the different pattern density at the cell edge. Thus, during the PSM + PR flow process, 'contact shift' and 'contact distortion' (so-called 'Eyebrow') defects are unavoidable. To repel these defects, we designed the new lithographic process; the UV-bake before thermal flow process. By the UV light at 130 +/- 10 degrees Celsius, the resist was cured at the resist surface. This surface-cured resist has the higher Tg temperature even the normal PSM reticle induces the Tg down. Top surface curing (hardening) also minimized the bulk effect. To maximize the UV bake effects, we developed new resist which was optimized to UV-bake process. By UV-bake process with new resist, the 0.2 micrometer contact hole was patterned. ET margin was 14 nm/10 mJ, and DOF margin was 0.6 micrometer at the mass fabrication device. The 'Eyebrow' and contact shift defects are not detected.

Paper Details

Date Published: 23 June 2000
PDF: 6 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388334
Show Author Affiliations
Hoesik Chung, Samsung Electronics Co., Ltd. (South Korea)
Jinhang Jung, Samsung Electronics Co., Ltd. (South Korea)
Youngsun Kim, Samsung Electronics Co., Ltd. (South Korea)
KwangSoek Choi, Samsung Electronics Co., Ltd. (South Korea)
NamHee Yoo, Samsung Electronics Co., Ltd. (South Korea)
Sangwoong Yoon, Samsung Electronics Co., Ltd. (South Korea)
JeEung Park, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top