Share Email Print
cover

Proceedings Paper

Design and synthesis of new photoresist materials for ArF lithography
Author(s): Sang-Jun Choi; Hyun-Woo Kim; Sang-Gyun Woo; Joo-Tae Moon
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A new class of photoresist matrix polymers based on vinyl ether-maleic anhydride (VEMA) alternating copolymers were developed for ArF single-layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether- maleic anhydride alternating copolymers and acrylate derivatives with bulky alicyclic acid-labile protecting groups. They showed a good controllability of polymerization and high transmittance. Also, these resists showed a good adhesion to the substrate, high dry-etching resistance against CF4 mixture gas (1.02 times the etching rate of DUV resist) and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120 nm L/S patterns have been resolved under conventional illumination.

Paper Details

Date Published: 23 June 2000
PDF: 8 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388333
Show Author Affiliations
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Hyun-Woo Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

© SPIE. Terms of Use
Back to Top