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Proceedings Paper

Gel layer model for photoresist development
Author(s): Joon Yeon Cho; Se-Jin Choi; Byung-Uk Kim; Jung-Moon Park; Seung Jong Lee
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Paper Abstract

The positive photoresist is assumed to be transferred, via intermediate gel state, from the resist to the developer solution. A mechanism for the development of positive photoresist is proposed to derive a development rate equation considering gel layer formation. This new model using the concept of gel layer can better fit recent experimental dissolution rate data exhibiting a notch shape which is critical to resist performance. The model parameters are obtained by fitting measured dissolution data using the least square method. The variation of gel layer thickness during dissolution is well explained with the model.

Paper Details

Date Published: 23 June 2000
PDF: 10 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388327
Show Author Affiliations
Joon Yeon Cho, Dong Jin Semichem Co., Ltd. (South Korea)
Se-Jin Choi, Dong Jin Semichem Co., Ltd. (South Korea)
Byung-Uk Kim, Dong Jin Semichem Co., Ltd. (South Korea)
Jung-Moon Park, Dong Jin Semichem Co., Ltd. (South Korea)
Seung Jong Lee, Seoul National Univ. (South Korea)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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