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Proceedings Paper

Reaction mechanisms in silicon-based resist materials: polysilanes for deep-UV, EUV, and x-ray lithography
Author(s): Shu Seki; Yusuke Sakurai; Kazuki Maeda; Yoshihisa Kunimi; Seiji Nagahara; Seiichi Tagawa
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Paper Abstract

The present paper describes mechanisms of photo- and radiation induced reactions in silicon based resist materials: polysilanes with Si-branchings and Si-H bondings, as a candidate for EUV and X-ray resist materials. Polysilanes have been previously confirmed to show positive-type resist properties for UV light, electron beams (EB), X-rays, etc. at any conditions. However the cross-linking reaction of the polymer became dominant in the polysilane with Si-branchings upon irradiation to UV light, EB, and ion beams. The efficiency of the cross-linking reaction strongly depended on the ratio of Si-branching giving polymer gels in the polysilane with higher amount of Si-branching than 5% even for (gamma) -ray irradiation. Polyhydrosilanes containing vinyl groups revealed to cause efficient cross-linking reactions with the presence of catalysts for hydrosilylation upon exposure to deep UV or X-rays, leading to high-sensitive negative resist materials for EUV lithography.

Paper Details

Date Published: 23 June 2000
PDF: 8 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388326
Show Author Affiliations
Shu Seki, Osaka Univ. (Japan)
Yusuke Sakurai, Osaka Univ. (Japan)
Kazuki Maeda, Osaka Univ. (Japan)
Yoshihisa Kunimi, Osaka Univ. (Japan)
Seiji Nagahara, Osaka Univ. (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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