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Proceedings Paper

Development of analysis system for F2-excimer laser photochemical processes
Author(s): Atsushi Sekiguchi; Mikio Kadoi; Yasuhiro Miyake; Toshiharu Matsuzawa; Chris A. Mack
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Paper Abstract

A system for photochemical analysis of F2-excimer laser lithography processes has been developed. The system, VUVES- 4500, consists of 3 units: (1) an exposure and bake unit that uses the F2-excimer laser to carry out a flood exposure and then post-exposure bake (PEB) of a resist coated wafer, (2) a unit for the measurement of development rate of photoresists, and (3) a simulation unit that utilizes PROLITH to calculate the resist profiles and process latitude using the measured development rate data. With this system, preliminary evaluation of the performance of F2 excimer laser lithography can be performed without a lithography tool that is capable of imaging and alignment. Profiles for 100 nm lines are simulated for the PAR-101 resist (manufactured by Sumitomo Chemical) and the SAL-601 resist (manufactured by Shipley), a chemically amplified resist that has sensitivity at the F2 excimer laser wavelength. The simulation successfully predicts the resist behavior. Thus, it is confirmed that the system enables efficient evaluation of the performance of F2 excimer laser lithography processes.

Paper Details

Date Published: 23 June 2000
PDF: 18 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388324
Show Author Affiliations
Atsushi Sekiguchi, Litho Tech Japan Corp. (Japan)
Mikio Kadoi, Litho Tech Japan Corp. (Japan)
Yasuhiro Miyake, Litho Tech Japan Corp. (Japan)
Toshiharu Matsuzawa, Litho Tech Japan Corp. (Japan)
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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