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Proceedings Paper

Polymers for 157-nm photoresist applications: a progress report
Author(s): Kyle Patterson; Mikio Yamachika; Raymond Jui-Pu Hung; Colin J. Brodsky; Shintaro Yamada; Mark H. Somervell; Brian Osborn; Daniel S. Hall; Gordana Dukovic; Jeff D. Byers; Will Conley; C. Grant Willson
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Paper Abstract

Finding materials that offer the all of the characteristics required of photoresist matrix resin polymers while trying to maintain a high level of transparency at 157 nm is a daunting challenge. To simplify this task, we have broken the design of these polymers down into subunits, each of which is responsible for a required function in the final material. In addition, we have begun collecting gas-phase VUV spectra of these potential subunits to measure their individual absorbance contributions. Progress on developing materials for each of these subunits are presented along with plans for future studies.

Paper Details

Date Published: 23 June 2000
PDF: 10 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388320
Show Author Affiliations
Kyle Patterson, Univ. of Texas at Austin (United States)
Mikio Yamachika, Univ. of Texas at Austin. (United States)
Raymond Jui-Pu Hung, Univ. of Texas at Austin (United States)
Colin J. Brodsky, Univ. of Texas at Austin (United States)
Shintaro Yamada, Univ. of Texas at Austin (United States)
Mark H. Somervell, Univ. of Texas at Austin (United States)
Brian Osborn, Univ. of Texas at Austin (United States)
Daniel S. Hall, Univ. of Texas at Austin (United States)
Gordana Dukovic, Univ. of Texas at Austin (United States)
Jeff D. Byers, International SEMATECH (United States)
Will Conley, International SEMATECH (United States)
C. Grant Willson, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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