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Proceedings Paper

Structurally variable cyclopolymers with excellent etch resistance and their application to 193-nm lithography
Author(s): John M. Klopp; Dario Pasini; Jean M. J. Frechet; Jeff D. Byers
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Paper Abstract

We report on the development and exploitation of a new type of chemically amplified resist for 193 nm microlithography. The approach has great versatility as it involves a general structure amenable to radical cyclopolymerization that contains easily interchanged ester functionalities. As the mechanism of polymerization involves free radicals, changes may be made either in the polymerization conditions or in the monomer feed to adjust variables such molecular weight or etch resistance. The latter property is favorably influenced by the formation of new ring structures during polymerization. Variations in the nature of the ester moieties contained in the monomer area easily accomplished to modify the imaging characteristics, surface properties, or etch resistance of the polymers. We report the preparation of a number of novel polymer and copolymer structures and their preliminary testing as resist candidates for 193 nm lithography.

Paper Details

Date Published: 23 June 2000
PDF: 8 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388314
Show Author Affiliations
John M. Klopp, Univ. of California/Berkeley (United States)
Dario Pasini, Univ. of California/Berkeley (United States)
Jean M. J. Frechet, Univ. of California/Berkeley (United States)
Jeff D. Byers, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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