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Proceedings Paper

Cycloolefin-maleic anhydride copolymers for 193-nm resist compositions
Author(s): M. Dalil Rahman; Jun-Bom Bae; Michelle M. Cook; Dana L. Durham; Takanori Kudo; Woo-Kyu Kim; Munirathna Padmanaban; Ralph R. Dammel
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Paper Abstract

Cycloolefin/maleic anhydride systems are a favorable approach to dry etch resistant resists for 193 nm lithography. This paper reports on poly(BNC/HNC/NC/MA) tetrapolymers, from t- butylnorbornene carboxylate (BNC), hydroxyethyl-norbornene carboxylate (HNC), norbornene carboxylic acid (NC) and maleic anhydride (MA). It was found that moisture has to be excluded in the synthesis of these systems if reproducible results are to be obtained. Lithographic evaluation of an optimized, modified polymer has shown linear isolated line resolution down to 100 nm using conventional 193 nm illumination. Possible reactions of the alcohol and anhydride moieties are discussed, and the effect of the anhydride unit on polymer absorbance is discussed using succinnic anhydride as a model compound.

Paper Details

Date Published: 23 June 2000
PDF: 8 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388306
Show Author Affiliations
M. Dalil Rahman, Clariant Corp. (United States)
Jun-Bom Bae, Clariant Corp. (United States)
Michelle M. Cook, Clariant Corp. (United States)
Dana L. Durham, Clariant Corp. (United States)
Takanori Kudo, Clariant Corp. (United States)
Woo-Kyu Kim, Clariant Corp. (United States)
Munirathna Padmanaban, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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