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Proceedings Paper

Surface composition of a norbornene-maleic-anhydride-based 193-nm photoresists for different photoacid generators as determined by x-ray photoelectron spectroscopy
Author(s): Henry W. Krautter; Francis M. Houlihan; Richard S. Hutton; Ilya L. Rushkin; R. L. Opila
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Paper Abstract

The surface composition of chemically amplified photoresists depends upon the photoacid generator used and the processing. We have used x-ray photoelectron spectroscopy to determine the surface composition of resists using four different photoacid generators: trifluoromethanesulfonate, perfluorobutanesulfonate, perfluorooctanesulfonate, and perfluorobenzenesulfonate. The fluorine in each of these PAGs was used as a tag of their presence on the surface. The surface F concentration generally increased after post- exposure bake. The F concentration tended to increase further after a short bake, but usually decreased after longer baking times. These results suggest that the surface concentration of F reflected competition between bulk diffusion of the photoacid leading to surface segregation and its volatilization.

Paper Details

Date Published: 23 June 2000
PDF: 9 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388298
Show Author Affiliations
Henry W. Krautter, Lucent Technologies/Bell Labs. (United States)
Francis M. Houlihan, Lucent Technologies/Bell Labs. (United States)
Richard S. Hutton, Lucent Technologies/Bell Labs. (United States)
Ilya L. Rushkin, Arch Chemicals, Inc. (United States)
R. L. Opila, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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