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Proceedings Paper

Design strategies for 157-nm single-layer photoresists: lithographic evaluation of a poly(A-trifluoromethyl vinyl alcohol) copolymer
Author(s): Dirk Schmaljohann; Young C. Bae; Gina L. Weibel; Alyssandrea H. Hamad; Christopher Kemper Ober
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Paper Abstract

Poly(vinyl alcohol-co-(alpha) -trifluoromethyl vinyl alcohol) (PVA-co-CF3PVA) protected with an acid cleavable group was prepared as a single-layer photoresist for use in 157 nm VUV lithography. It was found that the (alpha) -trifluoromethyl substituent renders PVA-co-CF3PVA readily soluble in 0.262 N TMAH. The protected polymer can be spin-coated from PGMEA and preliminary studies using 248 nm exposure showed a THP protected PVA-co-CF3PVA undergoes chemically amplified deprotection with a clearing dose of approximately 15 mJ/cm2. Using a VUV spectrometer, absorption coefficients of approximately 3 micrometer-1 were observed at 157 nm with PVA-co-CF3PVA and THP protected PVA-co-CF3PVA. Detailed lithographic evaluation of the polymer is underway and design strategies for 157 nm single-layer photoresists will be discussed.

Paper Details

Date Published: 23 June 2000
PDF: 5 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388297
Show Author Affiliations
Dirk Schmaljohann, Cornell Univ. (United States)
Young C. Bae, Cornell Univ. (United States)
Gina L. Weibel, Cornell Univ. (United States)
Alyssandrea H. Hamad, Cornell Univ. (United States)
Christopher Kemper Ober, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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