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Proceedings Paper

Pattern collapse in high-aspect-ratio DUV and 193-nm resists
Author(s): Wolf-Dieter Domke; Victoria L. Graffenberg; Shashikant Patel; Georgia K. Rich; Heidi B. Cao; Paul F. Nealey
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Paper Abstract

The pattern collapse behavior of a set of 193 nm resists in high aspect ratios was quantified. For all the resists investigated a general behavior could be observed: the collapse did not only depend on aspect ratio but also on pitch. With higher aspect ratio/pitch (normalized aspect ratio: NAR) all the resists go in a sigmoidal step from no collapse to total collapse. Surfactants in the developer did not have a consistent effect on pattern collapse. Resists of different polymer structure showed a very different tendency to collapse: acrylic resists collapse earlier than cyclo- olefinic resists. It could be deduced that pattern collapse will be a significant problem starting at the 130 nm node, if the film thickness range of the SIA roadmap are maintained. Comparison with data obtained for DUV resists showed that pattern collapse might limit the application of DUV resists in NGL. The modeling work at the University of Wisconsin shows the big impact of thermo-mechanical thin film properties on the pattern collapse problem.

Paper Details

Date Published: 23 June 2000
PDF: 9 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388293
Show Author Affiliations
Wolf-Dieter Domke, International SEMATECH (Germany)
Victoria L. Graffenberg, International SEMATECH (United States)
Shashikant Patel, International SEMATECH (United States)
Georgia K. Rich, International SEMATECH (United States)
Heidi B. Cao, Univ. of Wisconsin/Madison (United States)
Paul F. Nealey, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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