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Proceedings Paper

Studies directed to the design and development of a high-energy implant resist
Author(s): Warren Montgomery; PingYong Xu; PingHung Lu; Salem Methsun; Ralph R. Dammel; Nara Meyyappan; Noriyuki Kobayashi; David Pritchard
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Paper Abstract

This paper describes experiments aimed at developing a new i- line sensitive negative tone resist for high-energy implant applications. Specifically, key parameters such as outgassing, thermal stability and resolution will be addressed. The resist is targeted for implant layers ranging from 1 micrometer to 4 micrometer in thickness, with a target CD of 0.5 micrometer to 2 micrometer, respectively. It has been reported previously that negative resists display little to no outgassing when used in conventional implant systems. It is also important to note that negative resists tend not to exhibit the swelling problems seen with positive systems when exposed to organic edge bead removers. These and other benefits of negative resists will be identified and described in detail in this paper.

Paper Details

Date Published: 23 June 2000
PDF: 14 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388291
Show Author Affiliations
Warren Montgomery, Clariant Corp. (United States)
PingYong Xu, Clariant Corp. (United States)
PingHung Lu, Clariant Corp. (United States)
Salem Methsun, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)
Nara Meyyappan, Silterra Corp. (Malaysia)
Noriyuki Kobayashi, LSI Logic Corp. (Japan)
David Pritchard, LSI Logic Corp. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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