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Proceedings Paper

193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers
Author(s): Ratnam Sooriyakumaran; Debra Fenzel-Alexander; Phillip J. Brock; Carl E. Larson; Richard A. Di Pietro; Gregory M. Wallraff; Donald C. Hofer; Dan J. Dawson; Arpan P. Mahorowala; Marie Angelopoulos
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Paper Abstract

We have designed and developed a high resolution 193 nm bilayer resist system based on alternating copolymers of silane substituted norbornene and maleic anhydride. We have utilized a combination of acid labile silane functionalities and acid stable silicon groups in this resist development.

Paper Details

Date Published: 23 June 2000
PDF: 10 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388282
Show Author Affiliations
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Debra Fenzel-Alexander, IBM Almaden Research Ctr. (United States)
Phillip J. Brock, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
Richard A. Di Pietro, IBM Almaden Research Ctr. (United States)
Gregory M. Wallraff, IBM Almaden Research Ctr. (United States)
Donald C. Hofer, IBM Almaden Research Ctr. (United States)
Dan J. Dawson, IBM Almaden Research Ctr. (United States)
Arpan P. Mahorowala, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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