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Proceedings Paper

Materials design and lithographic performance of maleic anhydride/cycloolefin copolymer for ArF resist
Author(s): Joo Hyeon Park; Jae-Young Kim; Dong-Chul Seo; Sun-Yi Park; Hosull Lee; Seong-Ju Kim; Jae Chang Jung; Ki-Ho Baik
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Paper Abstract

Photoresist using maleic anhydride/cycloolefin copolymer is a leading candidate for the 193 nm photolithography. Until recently, the efforts to improve 193 nm photoresist have been focused on resolution and dry-etch resistance. Therefore, we have synthesized some kinds of matrix resins and additives containing alicyclic group and acid labile group. The matrix resin is alternating copolymer obtained by free radical polymerization of maleic anhydride and cycloolefinic derivatives. And, the additives have a low molecular weight containing alicyclic group and acid labile group. The additives not only serve as dissolution inhibitors but also improve the pattern profile and dry-etch resistance. In this paper, we will describe the approaches to the resist materials, which are involved in our photoacid generator concept.

Paper Details

Date Published: 23 June 2000
PDF: 8 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388281
Show Author Affiliations
Joo Hyeon Park, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Jae-Young Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Dong-Chul Seo, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Sun-Yi Park, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Hosull Lee, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Seong-Ju Kim, Korea Kumho Petrochemical Co., Ltd. (South Korea)
Jae Chang Jung, Hyundai Electronics Industries Co., Ltd. (South Korea)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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