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Proceedings Paper

Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)
Author(s): Pushkara Rao Varanasi; George M. Jordhamo; Margaret C. Lawson; K. Rex Chen; William R. Brunsvold; Timothy Hughes; Robin Keller; Mahmoud Khojasteh; W. Li; Robert D. Allen; Hiroshi Ito; Juliann Opitz; Hoa D. Truong; Thomas I. Wallow
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Paper Abstract

In this paper, we have shown the progress we have made in improving reactive-ion-etch stability and lithographic performance of IBM 193 nm resist materials. Using selectively functionalized cyclicolefins, we have developed 193 nm resists with etch stability and post-etch surface roughness comparable to those of the matured, state-of-the-art DUV resists. Furthermore, we have also demonstrated dramatically improvement in dense line (100 nm 1:1 L/S) and semi-dense line (< 100 nm 1:2, 1:3 L/S) resolution using resolution enhancement techniques such as alternate phase shift mask.

Paper Details

Date Published: 23 June 2000
PDF: 6 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388280
Show Author Affiliations
Pushkara Rao Varanasi, IBM Microelectronics Div. (United States)
George M. Jordhamo, IBM Microelectronics Div. (United States)
Margaret C. Lawson, IBM Microelectronics Div. (United States)
K. Rex Chen, IBM Microelectronics Div. (United States)
William R. Brunsvold, IBM Microelectronics Div. (United States)
Timothy Hughes, IBM Microelectronics Div. (United States)
Robin Keller, IBM Microelectronics Div. (United States)
Mahmoud Khojasteh, IBM Microelectronics Div. (United States)
W. Li, IBM Microelectronics Div. (United States)
Robert D. Allen, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Juliann Opitz, IBM Almaden Research Ctr. (United States)
Hoa D. Truong, IBM Almaden Research Ctr. (United States)
Thomas I. Wallow, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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