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Proceedings Paper

Application of photodecomposable base concept to 193-nm resists
Author(s): Munirathna Padmanaban; Jun-Bom Bae; Michelle M. Cook; Woo-Kyu Kim; Axel Klauck-Jacobs; Takanori Kudo; M. Dalil Rahman; Ralph R. Dammel; Jeff D. Byers
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Paper Abstract

This paper reports on the use of trimethyl sulfonium hydroxide as a base additive for 193 nm applications, which is found to stabilize the latent image as well a act as a photodecomposable base. Delay time stability (exposure to post-exposure bake) of formulations consisting of trimethylsulfonium hydroxide is compared to that of a non- photodecomposable base (diethanolamine) in both methacrylate- and cycloolefin-based 193 nm resists. Resist formulations made using the trimethylsulfonium base were stable for more than one hour, while the reference formulation with diethanolamine showed T-top formation within 10 minutes delay time under the same conditions. The trialkylsulfonium hydroxide base additives were found to be photodecomposable by measuring the acid produced upon exposure. Compared to a non- photodecomposable base containing resist, the photodecomposable base containing resist produced more acid in the exposed areas under identical PAG/BASE molar ratios.

Paper Details

Date Published: 23 June 2000
PDF: 11 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388278
Show Author Affiliations
Munirathna Padmanaban, Clariant Corp. (United States)
Jun-Bom Bae, Clariant Corp. (United States)
Michelle M. Cook, Clariant Corp. (United States)
Woo-Kyu Kim, Clariant Corp. (United States)
Axel Klauck-Jacobs, Clariant Corp. (United States)
Takanori Kudo, Clariant Corp. (United States)
M. Dalil Rahman, Clariant Corp. (United States)
Ralph R. Dammel, Clariant Corp. (United States)
Jeff D. Byers, International SEMATECH (United States)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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