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Proceedings Paper

Chemically amplified resists based on norbornene polymer with 2-trimethylsilyl-2-propyl ester protecting group
Author(s): Jin-Baek Kim; Jae-Jun Lee; Jae-Sung Kang
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Paper Abstract

New silicon-containing polymers, poly{5-[(2- trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co-maleic anhydride} [poly(TMSPN-co-MA)] and poly{5- [(2-trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co- maleic anhydride-co-2-tri-methylsilyl-2-propyl methacrylate}, were synthesized for dually developable chemically amplified resists. The polymers exhibited relatively good transmittances at 193 nm and have good thermal stability up to 190 degrees Celsius. Poly(TMSPN-co-MA) was evaluated as a resist for ArF excimer laser lithography. 0.18 micrometer line and space patterns were obtained at a dose of 11 mJ/cm2 using the conventional wet developer with an ArF excimer laser stepper. 1 micrometer line and space patterns were obtained using dry development process with O2 reactive ion etching.

Paper Details

Date Published: 23 June 2000
PDF: 9 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388271
Show Author Affiliations
Jin-Baek Kim, Korea Advanced Institute of Science and Technology (South Korea)
Jae-Jun Lee, Korea Advanced Institute of Science and Technology (South Korea)
Jae-Sung Kang, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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