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Proceedings Paper

Study of bilayer negative-tone silylation process for 193-nm lithography
Author(s): Hiroyuki Watanabe; Isao Satou; Masayuki Endo; Hiroaki Morimoto
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Paper Abstract

We have been evaluating the silylation process for 193-nm lithography as one of the Top Surface Imaging (TSI) techniques. In this paper, we describe a bi-layer negative- tone silylation process using polyvinylphenol (PVP) resin as a top layer, whose hydroxyl sites are fully protected by tertiary-butoxycarbonyl (t-BOC) and/or 1-ethoxyethyl (EOE) groups. First, we used a silylation resist fully-protected by only t-BOC. We could fabricate 0.12 micrometer L/S patterns without using any resolution enhancement techniques. In addition, there was a rectangular profile of resist patterns and no scums around the spaces after the dry development. However, the sensitivity was about 11 mJ/cm2, the LER of the 0.13 micrometer L/S patterns was about 15 nm (3(sigma) ), and also the CD fluctuated according to the PED time. In order to improve these characteristics of the silylation resist, we applied the EOE group as a protective one for practical materials which contributes to easy deprotection. When we changed the protection ratio of t-BOC to EOE, we observed that the pattern profile became worse based on the increase in the protection ratio of the EOE group. However, we could improve the pattern profile by controlling the hygroscopic characteristic of the silylation resist. In the case of the silylation resist protected by t-BOC/EOE (70/30), we could successfully obtain 0.12 micrometer L/S patterns with the high sensitivity of about 2 mJ/cm2.

Paper Details

Date Published: 23 June 2000
PDF: 12 pages
Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); doi: 10.1117/12.388261
Show Author Affiliations
Hiroyuki Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Isao Satou, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masayuki Endo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 3999:
Advances in Resist Technology and Processing XVII
Francis M. Houlihan, Editor(s)

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