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Proceedings Paper

Analysis of laser ablation process in semiconductor due to ultrashort-pulsed laser with molecular dynamics simulation
Author(s): Koji Watanabe; Yuri Ishizaka; Etsuji Ohmura; Isamu Miyamoto
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Paper Abstract

Rapid fusion and evaporation phenomena of silicon with ultrafast laser irradiation were simulated using the 3D molecular dynamics. Surface structure dependence of laser shock phenomena, fusion and evaporation process was examined for the Si(100) and Si(111) surface structures. It was shown that the crystal orientation influences the propagation velocity of shock wave and that heat conduction but laser absorption in the materials, that is, absorption coefficient affects the fusion depth when the pulse width is subpicosecond.

Paper Details

Date Published: 7 June 2000
PDF: 10 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387594
Show Author Affiliations
Koji Watanabe, Osaka Univ. (Japan)
Yuri Ishizaka, Osaka Univ. (Japan)
Etsuji Ohmura, Osaka Univ. (Japan)
Isamu Miyamoto, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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