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Proceedings Paper

Femtosecond pulse laser machining of InP wafers
Author(s): Jerzy M. Wrobel; Joern Bonse; Joerg Krueger; Wolfgang Kautek
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Paper Abstract

Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.

Paper Details

Date Published: 7 June 2000
PDF: 8 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387593
Show Author Affiliations
Jerzy M. Wrobel, Univ. of Missouri/Kansas City (United States)
Joern Bonse, Federal Institute for Materials Research and Testing (Germany)
Joerg Krueger, Federal Institute for Materials Research and Testing (Germany)
Wolfgang Kautek, Federal Institute for Materials Research and Testing (Germany)


Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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