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Proceedings Paper

Novel thin-film deposition method and system with IR-FEL
Author(s): Masato Yasumoto; Norimasa Umesaki; Takio Tomimasu; Akira Ishizu; Kunio Awazu
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Paper Abstract

We propose a novel method for thin film deposition with an IR-FEL using the IR-FEL wavelength tunability in infrared region. This is an unique method in which only the vapor deposition molecule is activated by applying laser of vibrational excitation wavelength of the vapor deposition molecule on the substrate surface, when the thin film intends to deposit on the substrate. We developed two equipments in order to realize and evaluate the new method. One is IR-FEL assisted RF sputter deposition chamber system, the other is IR-FEL assisted laser ablation chamber system. Moreover using the former equipment, we carry out the preliminary experiment on the preparation of ITO (In-Sn-O) thin film.

Paper Details

Date Published: 7 June 2000
PDF: 6 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387589
Show Author Affiliations
Masato Yasumoto, Osaka National Research Institute (Japan)
Norimasa Umesaki, Osaka National Research Institute (Japan)
Takio Tomimasu, Free Electron Laser Research Institute (Japan)
Akira Ishizu, Free Electron Laser Research Institute (Japan)
Kunio Awazu, Free Electron Laser Research Institute (Japan)


Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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