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Proceedings Paper

Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb)
Author(s): Andrew R. Novoselov; Anatoly G. Klimenko; Evgeny V. Fedosenko; A. E. Plotnikov
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Paper Abstract

We studied stages of formation of laser craters for the purpose of decreasing a defeat zone of a semiconductor material close to laser craters. The researches were carried out using SEM and optical microscopy. This paper is devoted to results of optimization of the laser radiation for applications in microelectronics. The principles of optimization of a wavelength, pulse duration and repetition frequency of laser radiation are determined. The effect of the diameter of a laser spot onto the process of formation of a laser crater is shown. It is opinion of the authors, that the main criteria that necessarily should be taken into account when doing the laser scribing of semiconductor wafers, are as follows: Selection of a laser source wavelength with maximum coefficient of absorption in a target. The energy density in a laser spot on target must be less than threshold for the material; The time gap between pulses is determined by time of the ending of processes in the material ofthe target. The decrease in diameter of a laser beam allows maximum depth to diameter relation to be achieved.

Paper Details

Date Published: 7 June 2000
PDF: 6 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387581
Show Author Affiliations
Andrew R. Novoselov, Institute of Semiconductor Physics (Russia)
Anatoly G. Klimenko, Institute of Semiconductor Physics (Russia)
Evgeny V. Fedosenko, Institute of Semiconductor Physics (Russia)
A. E. Plotnikov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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