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Proceedings Paper

Production of photoluminescent Si-based nanostructures by laser ablation: effects of ablation and postdeposition conditions
Author(s): Andrei V. Kabashin; M. Charbonneau-Lefort; Michel Meunier; Richard Leonelli
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Paper Abstract

A method of Pulsed Laser Ablation (PLA) from a Si target in an inert He ambient has been applied in combination with different post-deposition oxidation procedures for the fabrication of Si/SiOx nanocrystalline structures on Si substrates. After the growth of a thin natural oxide layer on the film surface, the structures exhibited a strong visible photoluminescence (PL), which remained stable even under a prolonged continuous irradiation of the sample by an excitation laser light. The peak energy of the PL spectra could be finely varied between 1.58 and 2.15 eV by a change in the residual gas pressure during the deposition process. An effect of thermal annealing on the PL properties of the Si/SiOx films has been examined and compared with the results for Si-based films produced by thermal evaporation from a Si target in vacuum. For both deposition techniques, the thermal annealing led to a dramatic change of PL properties giving rise to a fixed PL peak around 2.2 eV. Photoluminescent properties of particles formed by PLA with natural oxidation were different than those of thermally oxidized amorphous Si films. A recombination through oxygen- related compounds in the upper film layer is considered as the most probable mechanism of PL.

Paper Details

Date Published: 7 June 2000
PDF: 8 pages
Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); doi: 10.1117/12.387555
Show Author Affiliations
Andrei V. Kabashin, Ecole Polytechnique de Montreal (Canada)
M. Charbonneau-Lefort, Ecole Polytechnique de Montreal (Canada)
Michel Meunier, Ecole Polytechnique de Montreal (Canada)
Richard Leonelli, Univ. de Montreal (Canada)

Published in SPIE Proceedings Vol. 3933:
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
Henry Helvajian; Koji Sugioka; Malcolm C. Gower; Jan J. Dubowski, Editor(s)

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